Posted on February 26, 2013 2:30 PM by Robert Tanner
It wasn’t that long ago that Micron announced the P400m, a special high-endurance model SSD designed for write-intensive enterprise applications. Following it up, Micron has just announced the P410m, which is the same SSD but with a serial-attached-SCSI port in a 2.5” form factor.
The P410m will still feature the same or similar Marvell controller with Micron-developed firmware, but more importantly will also utilize 25nm Micron XPERT MLC NAND. This flash is analogous to Intel’s MLC-HET NAND in that it bridges the gap between traditional MLC and SLC NAND in terms of write endurance. Remember that Micron and Intel have a joint venture (IMFT) that both companies utilize for NAND manufacturing, further giving themselves the ability to selectively bin out the best quality NAND for their own uses. Perhaps that is why Micron rates the P410m with up to 7PB endurance, or “10 drive fills per day for 5 years”.
Specification-wise, the P410m offers a mild bump over the P400m with 410/345MBps sequential read/write performance, and 50,000/30,000 random read/write IOPS, respectively. It will launch in 100, 200, and 400GB capacities and feature the thinner 7mm height. Pricing has yet to be released, but Micron is confident that the SAS P410m is a good match for data centers, enterprise servers, blades, or any other usage that would require very high endurance flash paired with SSD-level random IOPS and low latencies.