Samsung announces PRAM

Samsung today announced that it has introduced a new type of nonvolatile memory called PRAM or Phase-change Random Access Memory. The new memory technology is currently under heavy research from Samsung, but the company has finally demonstrated a working 512 megabit sample. According to Samsung, PRAM is slated to replace current NOR flash memory technology within the next several years.

PRAM is expected to be 30x faster than standard NOR flash memory because it can continuously write without having to erase blocks first. It all sounds great, but it will be a few years before we can get our hands on anything. Until that time, lets see some huge density flash drives that won’t cost an arm and a leg!